RESIDUAL CHLORINE IN O2-HCL GROWN SIO2

被引：31

作者：

MEEK, RL ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 02期

关键词：

D O I：

10.1149/1.2403443

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：308 / 310

页数：3

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[8] ANALYSIS OF AMORPHOUS LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS [J].

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