SCANNED ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED SILICON

被引：6

作者：

SMITH, HJ ^{[1
]}

LIGEON, E ^{[1
]}

BONTEMPS, A ^{[1
]}

机构：

[1] CEN,DEPT RECH FONDAMENTALE,SERV PHYS SOLIDES,F-38041 GRENOBLE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 11期

关键词：

D O I：

10.1063/1.91755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1036 / 1039

页数：4

共 5 条

[1] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[2] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

GREENWALD, AC ;

KIRKPATRICK, AR ;

LITTLE, RG ;

MINNUCCI, JA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787

[3] CHARACTERIZATION OF MULTIPLE-SCAN ELECTRON-BEAM ANNEALING METHOD [J].

MCMAHON, RA ;

AHMED, H ;

DOBSON, RM ;

SPEIGHT, JD .

ELECTRONICS LETTERS, 1980, 16 (08) :295-297

[4]

MCMAHON RA, 1979, ELECTRON LETT, V15, P47

[5] SCANNING-ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED SILICON [J].

REGOLINI, JL ;

GIBBONS, JF ;

SIGMON, TW ;

PEASE, RFW ;

MAGEE, TJ ;

PENG, J .

APPLIED PHYSICS LETTERS, 1979, 34 (06) :410-412

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