VACANCY INTERACTIONS IN SILICON

被引：48
作者：
WOODBURY, HH
LUDWIG, GW
机构：
来源：
PHYSICAL REVIEW LETTERS | 1960年 / 5卷 / 03期
关键词：
D O I：
10.1103/PhysRevLett.5.96
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：96 / 97
页数：2
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