THE RESONANT-TUNNELING FIELD-EFFECT TRANSISTOR - A NEW NEGATIVE TRANSCONDUCTANCE DEVICE

被引：21

作者：

SEN, S

CAPASSO, F

BELTRAM, F

CHO, AY

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 08期

关键词：

D O I：

10.1109/T-ED.1987.23149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1768 / 1773

页数：6

共 16 条

[1] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J].

BONNEFOI, AR ;

CHOW, DH ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :888-890

[2] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J].

CAPASSO, F ;

KIEHL, RA .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1366-1368

[3] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J].

CAPASSO, F ;

SEN, S ;

GOSSARD, AC ;

HUTCHINSON, AL ;

ENGLISH, JH .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) :573-576

[4]

Capasso F., 1985, Picosecond Electronics and Optoelectronics. Proceedings of the Topical Meeting, P112

[5] RESONANT TUNNELING GATE FIELD-EFFECT TRANSISTOR [J].

CAPASSO, F ;

SEN, S ;

BELTRAM, F ;

CHO, AY .

ELECTRONICS LETTERS, 1987, 23 (05) :225-226

[6]

CAPASSO F, UNPUB

[7]

Futatsugi T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P286

[8]

GOLDMAN VJ, 1987, PHYS REV B, V15

[9] A FIELD-EFFECT TRANSISTOR WITH A NEGATIVE DIFFERENTIAL RESISTANCE [J].

KASTALSKY, A ;

LURYI, S ;

GOSSARD, AC ;

HENDEL, R .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :57-60

[10] HOT-ELECTRON INJECTION DEVICES [J].

LURYI, S ;

KASTALSKY, A .

SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (05) :389-400

← 1 2 →