SILICON AUTOCOMPENSATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：4
|
作者：
BALLINGALL, JM [1 ]
MORRIS, BJ [1 ]
LEOPOLD, DJ [1 ]
RODE, DL [1 ]
机构：
[1] WASHINGTON UNIV,DEPT ELECT ENGN,ST LOUIS,MO 63130
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 10期
关键词：
D O I：
10.1063/1.336780
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3571 / 3573
页数：3
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