ANNEALING BEHAVIOR OF DEFECTS IN ELECTRON-IRRADIATED RHO-TYPE CDTE

被引：7
|
作者：
TAGUCHI, T [1 ]
SHIRAFUJI, J [1 ]
INUISHI, Y [1 ]
机构：
[1] OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 06期
关键词：
D O I：
10.1143/JJAP.13.1003
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1003 / 1004
页数：2
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