Observation of Transformation from Quantum Shuttle to Single-Electron Tunnel in Nanopillar Transistor

被引：0

作者：

Wan, Yue-Min ^{[1
]}

Chen, Shiao-Yu ^{[1
]}

Yang, Che-Min ^{[1
]}

Chen, Chih-An ^{[2
]}

Chen, Yi-Feng ^{[2
]}

Hsu, Hsiang-Chen ^{[2
]}

机构：

[1] I Shou Univ, Dept Elect Engn, Kaohsiung 84001, Taiwan

[2] I Shou Univ, Dept Mech Engn, Kaohsiung 84001, Taiwan

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2009年 / 7卷

关键词：

Nanopillar; Single-electron transistor; Switching current; Coulomb blockade; Electro-mechanical coupling model;

D O I：

10.1380/ejssnt.2009.518

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We reports observation of giant switching currents in nanopillar transistors at 300 K. It is found that these signals represent mechanical vibration due to the interaction of charging electron and the elastic materials of silicon and silicon nitride. Specifically, when an electron is charged to penetrate the SiNx/Si/SiNx multilayer, an electrical force will be initiated to make it vibrate. In addition, such motion will couple to the electronic state in the central Si island for the optimal exchange of elastic and quantum energy. As a consequence, in some mechanical modes, these coupled vibrations will make the transistor functioning like a self-coordinated switching pump for persistent tunnel of electrical current.

引用

页码：518 / 520

页数：3

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