CHARACTERIZATION OF MICROPOROUS SI BY FLOW CALORIMETRY - COMPARISON WITH A HYDROPHOBIC SIO2 MOLECULAR-SIEVE

被引:58
作者
CANHAM, LT [1 ]
GROSZEK, AJ [1 ]
机构
[1] MICROSCAL LTD,LONDON W10 5AL,ENGLAND
关键词
D O I
10.1063/1.351725
中图分类号
O59 [应用物理学];
学科分类号
摘要
Flow microcalorimetry has been used to study microporous silicon produced by electrochemical corrosion of bulk p-type silicon wafers in highly concentrated (50 wt %) aqueous hydrofluoric acid. Calorimetry data on pore size and hydrophobicity of freshly etched crystalline silicon structures are compared with similar measurements on silicalite, a well-studied microporous form of crystalline silicon dioxide. Silicalite has a tetrahedral SiO2 framework with interconnected "ultramicropores" that only readily admit molecules of less than 6 angstrom diameter. Its measured heat of immersion in n-heptane (kinetic diameter 4.3 angstrom) consequently far exceeds that in iso-octane (kinetic diameter 6.2 angstrom) and it preferentially adsorbs the normal alkane from the branched alkane. In direct contrast the microporous Si layers studied exhibited comparable heats of immersion for n-heptane and iso-octane, and did not show any preferential adsorption of the narrower molecule. In addition, the microporous Si layers studied exhibited appreciable heats of immersion in 1, 3, 5 tri-isopropylbenzene (kinetic diameter 8.5 angstrom). The majority of their pore volume is thus constrained to the "supermicropore" size regime of 10-20 angstrom width. Both silicalite and freshly etched microporous Si are shown, however, to be highly hydrophobic and organophilic materials. Their exothermic heats of immersion in n-heptane far exceed those in water and both materials preferentially interact with the polar alcohol (n-butanol) more strongly from water than from n-heptane.
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页码:1558 / 1565
页数:8
相关论文
共 42 条
[1]   ON CRYSTAL-STRUCTURE IMAGING OF SILICALITE BY HREM [J].
ALFREDSSON, V ;
TERASAKI, O ;
BOVIN, JO .
JOURNAL OF SOLID STATE CHEMISTRY, 1990, 84 (01) :171-177
[2]   FORMATION AND PROPERTIES OF POROUS SILICON FILM [J].
ARITA, Y ;
SUNOHARA, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :285-295
[3]   X-RAY TOPOGRAPHIC CHARACTERIZATION OF POROUS SILICON LAYERS [J].
BARLA, K ;
BOMCHIL, G ;
HERINO, R ;
PFISTER, JC ;
BARUCHEL, J .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :721-726
[4]   MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON [J].
BEALE, MIJ ;
CHEW, NG ;
UREN, MJ ;
CULLIS, AG ;
BENJAMIN, JD .
APPLIED PHYSICS LETTERS, 1985, 46 (01) :86-88
[5]   AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].
BEALE, MIJ ;
BENJAMIN, JD ;
UREN, MJ ;
CHEW, NG ;
CULLIS, AG .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :622-636
[7]   PORE-SIZE DISTRIBUTION IN POROUS SILICON STUDIED BY ADSORPTION-ISOTHERMS [J].
BOMCHIL, G ;
HERINO, R ;
BARLA, K ;
PFISTER, JC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) :1611-1614
[8]   ATMOSPHERIC IMPREGNATION OF POROUS SILICON AT ROOM-TEMPERATURE [J].
CANHAM, LT ;
HOULTON, MR ;
LEONG, WY ;
PICKERING, C ;
KEEN, JM .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :422-431
[9]  
CANHAM LT, 1991, ELECTRON TIMES, V590, P1
[10]  
CANHAM LT, 1990, APPL PHYS LETT, V57, P1048