ORIENTED ALUMINUM NITRIDE THIN-FILMS DEPOSITED BY PULSED-LASER ABLATION

被引：68
作者：
NORTON, MG
KOTULA, PG
CARTER, CB
机构：
[1] Department of Materials Science and Engineering, Cornell University, Ithaca
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 05期
关键词：
D O I：
10.1063/1.349352
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Single-phase aluminum nitride thin films with preferred crystallographic orientations have been grown on single-crystal sapphire by pulsed-laser ablation. The orientation of the films was found to be determined by the atmosphere and the nitrogen pressure during deposition and the substrate temperature. The films were examined by x-ray diffraction, and scanning electron microscopy.
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页码：2871 / 2873
页数：3
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