ORIENTED ALUMINUM NITRIDE THIN-FILMS DEPOSITED BY PULSED-LASER ABLATION

被引:68
作者
NORTON, MG
KOTULA, PG
CARTER, CB
机构
[1] Department of Materials Science and Engineering, Cornell University, Ithaca
关键词
D O I
10.1063/1.349352
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single-phase aluminum nitride thin films with preferred crystallographic orientations have been grown on single-crystal sapphire by pulsed-laser ablation. The orientation of the films was found to be determined by the atmosphere and the nitrogen pressure during deposition and the substrate temperature. The films were examined by x-ray diffraction, and scanning electron microscopy.
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页码:2871 / 2873
页数:3
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