WXN1-X ALLOYS AS DIFFUSION-BARRIERS BETWEEN AL AND SI

被引：46

作者：

SO, FCT ^{[1
]}

KOLAWA, E ^{[1
]}

ZHAO, XA ^{[1
]}

PAN, ETS ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.341579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2787 / 2789

页数：3

共 13 条

[1]

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[2] INVESTIGATION OF REACTIVELY SPUTTERED TIN FILMS FOR DIFFUSION-BARRIERS [J].

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THIN SOLID FILMS, 1986, 136 (02) :195-214

[3] SPUTTERED W-N DIFFUSION-BARRIERS [J].

KATTELUS, HP ;

KOLAWA, E ;

AFFOLTER, K ;

NICOLET, MA .

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[4]

KATTELUS HP, IN PRESS DIFFUSION P

[5]

KOLAWA E, 1987, TUNGSTEN OTHER REFRA, V2, P311

[6]

Moriya T., 1986, Tungsten and Other Refractory Metals for VLSI Applications. Proceedings of the 1985 and 1984 Workshops, P21

[7] DIFFUSION-BARRIERS IN LAYERED CONTACT STRUCTURES [J].

NICOLET, MA ;

BARTUR, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :786-793

[8] GENERAL-ASPECTS OF BARRIER LAYERS FOR VERY-LARGE-SCALE INTEGRATION APPLICATIONS .2. PRACTICE [J].

NOWICKI, RS ;

NICOLET, MA .

THIN SOLID FILMS, 1982, 96 (04) :317-326

[9]

PARK KH, 1987, TUNGSTEN OTHER REFRA, V2, P275

[10]

ROLAND JP, 1987, TUNGSTEN OTHER REFRA, V2, P419

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