TEXTURE OF SURFACES CLEANED BY ION BOMBARDMENT AND ANNEALING

被引:138
作者
HENZLER, M
机构
关键词
D O I
10.1016/0039-6028(70)90019-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:12 / &
相关论文
共 50 条
  • [3] Structure of InP (001) surfaces prepared by decapping and by ion bombardment and annealing
    Pahlke, D
    Kinsky, J
    Schultz, C
    Pristovsek, M
    Zorn, M
    Esser, N
    Richter, W
    PHYSICAL REVIEW B, 1997, 56 (04) : R1661 - R1663
  • [4] COMPARISON OF STRUCTURES OF SURFACES PREPARED IN HIGH VACUUM BY CLEAVING AND BY ION BOMBARDMENT AND ANNEALING
    HANEMAN, D
    PHYSICAL REVIEW, 1960, 119 (02): : 563 - 566
  • [5] Synergetic effects in annealing and low energy ion bombardment of Si(100) surfaces
    Lee, SM
    Fell, CJ
    Marton, D
    Rabalais, JW
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) : 5217 - 5223
  • [6] SILVER SCHOTTKY DIODES ON KELVIN, AES AND LEED CHARACTERIZED (100)SURFACES OF GAAS CLEANED BY ION-BOMBARDMENT
    PALAU, JM
    TESTEMALE, E
    ISMAIL, A
    LASSABATERE, L
    SOLID-STATE ELECTRONICS, 1982, 25 (04) : 285 - 294
  • [8] Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment
    Chen, Wan-Hsin
    Kawakami, Naoya
    Hsueh, Jing-Wen
    Kuo, Lai-Hsiang
    Chen, Jiun-Yu
    Liao, Ting-Wei
    Kuo, Chia-Nung
    Lue, Chin-Shan
    Lai, Yu-Ling
    Hsu, Yao-Jane
    Lien, Der-Hsien
    Hu, Chenming
    Chou, Jyh-Pin
    Luo, Meng-Fan
    Lin, Chun-Liang
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (12) : 16153 - 16161
  • [9] CHEMISTRY AND STRUCTURE OF GAAS-SURFACES CLEANED BY SULFUR ANNEALING
    SUGAHARA, H
    OSHIMA, M
    OIGAWA, H
    NANNICHI, Y
    THIN SOLID FILMS, 1992, 220 (1-2) : 212 - 216
  • [10] ANNEALING OF ION BOMBARDMENT DAMAGE IN GE
    ZWANGOBANI, E
    MACDONALD, RJ
    PHYSICS LETTERS A, 1970, A 32 (05) : 308 - +