LASER REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS

被引：31

作者：

CAMPISANO, SU

CATALANO, I

FOTI, G

RIMINI, E

EISEN, F

NICOLET, MA

机构：

[1] CALTECH,PASADENA,CA 91125

[2] UNIV BARI,IST FIS,I-70124 BARI,ITALY

[3] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 02期

关键词：

D O I：

10.1016/0038-1101(78)90285-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：485 / 488

页数：4

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[3]

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[4]

DVURECHENSKII AV, 1977, 1ST USSR USA SEM ION

[5]

FOTI G, UNPUBLISHED

[6] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J].

GAMO, K ;

INADA, T ;

MAYER, JW ;

EISEN, FH ;

RHODES, CG .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02) :85-89

[7]

KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[8]

KHAIBULLIN IB, 1977, 1ST USSR USA SEM ION

[9] SILICON SOLAR-CELLS BY HIGH-SPEED LOW-TEMPERATURE PROCESSING [J].

KIRKPATRICK, AR ;

MINNUCCI, JA ;

GREENWALD, AC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :429-432

[10]

SHTYRKOV EI, 1975, SOV PHYS SEMICOND+, V9, P1309

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