CORELESS DEFECTS AND THE CONTINUITY OF EPITAXIAL NISI2/SI(100) THIN-FILMS

被引：26

作者：

BATSTONE, JL ^{[1
]}

GIBSON, JM ^{[1
]}

TUNG, RT ^{[1
]}

LEVI, AFJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.99297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：828 / 830

页数：3

共 15 条

[1]

BATSTONE JL, 1987, MATER RES SOC S P, V82, P335

[2] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].

CHERNS, D ;

ANSTIS, GR ;

HUTCHISON, JL ;

SPENCE, JCH .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862

[3] THE ATOMIC-STRUCTURE OF THE NISI2-(001)SI INTERFACE [J].

CHERNS, D ;

HETHERINGTON, CJD ;

HUMPHREYS, CJ .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (01) :165-177

[4]

CHERNS D, 1984, MATER RES SOC S P, V25, P423

[5]

FOLL H, 1982, PHILOS MAG A, V45, P31, DOI 10.1080/01418618208243901

[6] INSITU STUDY OF THE MOLECULAR-BEAM EPITAXY OF COSI2 ON (111) SI BY TRANSMISSION ELECTRON-MICROSCOPY AND DIFFRACTION [J].

GIBSON, JM ;

BATSTONE, JL ;

TUNG, RT .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :45-47

[7] SCHOTTKY-BARRIER HEIGHT MEASUREMENTS OF EPITAXIAL NISI2 ON SI [J].

HAUENSTEIN, RJ ;

SCHLESINGER, TE ;

MCGILL, TC ;

HUNT, BD ;

SCHOWALTER, LJ .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :853-855

[8]

LEVI AFJ, 1987, MATER RES SOC S P, V77, P271

[9] CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111) [J].

LIEHR, M ;

SCHMID, PE ;

LEGOUES, FK ;

HO, PS .

PHYSICAL REVIEW LETTERS, 1985, 54 (19) :2139-2142

[10]

POND RC, 1986, MATER RES SOC S P, V56, P3

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