INTRINSIC RADIATIVE RECOMBINATION FROM QUANTUM STATES IN GAAS-ALXGA1-XAS MULTIQUANTUM-WELL STRUCTURES (REPRINTED FROM SOLID-STATE COMMUN, VOL 37, PG 219-222, 1981)

From absorption, emission, luminescence excitation and electron spin orientation studies of undoped GaAs-AlxGa1-xAs superlattices we demonstrate the intrinsic nature of the radiative recombination process. This is in direct contrast to recombination observed in similar purity thick GaAs material. Moreover, our results do not support a recent suggestion that enhanced LO phonon-electron coupling should occur in such superlattice structures.