LONG-WAVELENGTH STRAINED-LAYER INAS/GAINAS SINGLE-QUANTUM-WELL LASER GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATE

被引：13
作者：
TOURNIE, E
GRUNBERG, P
FOUILLANT, C
KADRET, S
BOISSIER, G
BARANOV, A
JOULLIE, A
GAUMONTGOARIN, E
PLOOG, KH
机构：
[1] UNIV MONTPELLIER,CNRS,URA 392,EQUIPE MICROOPTOELECTR MONTPELLIER,F-34095 MONTPELLIER 5,FRANCE
[2] ALCATEL ALSTHOM RECH,F-91460 MARCOUSSIS,FRANCE
[3] PAUL DRUDE INST FESTKORPERELEKTR,O-1086 BERLIN,GERMANY
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 14期
关键词：
EPITAXY AND EPITAXIAL GROWTH; LASERS; SEMICONDUCTOR LASERS;
D O I：
10.1049/el:19930839
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Laser emission is reported for the first time from a 10 monolayer-wide highly strained (3.2%) InAs single quantum well confined by Ga0.47In0.53As layers. At 80 K the emission spectrum of broad-area laser diodes is centred at 1.836 mum, the threshold current-density is approximately 500 A/cm2 and the characteristic temperature is T0 congruent-to 30 K. CW operation is achieved up to 110 K with narrow-stripe devices but at shorter wave-length, due to increased losses and filling of the quantum-well energy levels.
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收藏
页码：1255 / 1257
页数：3
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