HOT-CARRIER DEGRADATION OF NMOSTS STRESSED AT 4.2-K

被引：2
作者：
SIMOEN, E
CLAEYS, C
机构：
[1] IMEC, B-3001 Leuven
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 04期
关键词：
D O I：
10.1016/0038-1101(93)90262-O
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results of a systematic study of the degradation behaviour of nMOSTs stressed at 4.2 K will be reported. It will be shown that the stress-induced changes can be classified in reversible and irreversible (permanent) degradation, which strongly depend on the operation conditions during stress. The reversible changes are mainly related to hole-trapping in the body of the transistor and are accompanied by a decrease of the threshold voltage and a small transconductance overshoot. The effect of Channel Hot Carrier (CHC) stress on the typical 4.2 K anomalies (kink/hysteresis) will also be addressed and briefly discussed in view of recently published models.
引用
收藏
页码：527 / 532
页数：6
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