MAPPING OF GAAS AND SI WAFERS AND ION-IMPLANTED LAYERS BY LIGHT-INDUCED SCATTERING AND ABSORPTION OF IR LIGHT

被引：16

作者：

VAITKUS, J ^{[1
]}

GAUBAS, E ^{[1
]}

JARASIUNAS, K ^{[1
]}

PETRAUSKAS, M ^{[1
]}

机构：

[1] VILNIUS UNIV,MAT SCI LAB,VILNIUS 2432054,LITHUANIA,USSR

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 1A期

关键词：

D O I：

10.1088/0268-1242/7/1A/024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The methods of light-induced absorption and diffraction have been used to investigate the uniformity of Si and GaAs wafers and ion-implanted Si. Metastable annealing of defects, lifetime modification by swirl and radiation defects and anomalous depth penetration of ion-implantation-created defects have been demonstrated in Si. The mapping of GaAs wafers has been performed with picosecond and nanosecond light pulses and light absorption mechanisms are discussed.

引用

页码：A131 / A134

页数：4

共 12 条

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