EXCITONIC ABSORPTION IN INGAP GAAS MULTIQUANTUM WELLS

被引：2
|
作者：
PATRIZI, GA [1 ]
LEE, HY [1 ]
HAFICH, MJ [1 ]
SILVESTRE, P [1 ]
ROBINSON, GY [1 ]
机构：
[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 25期
关键词：
PHOTODIODES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19911464
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Multiquantum well pin photodiodes have been fabricated using InGaP/GaAs grown by gas-source MBE. The room temperature photocurrent spectrum of the diodes exhibits strong excitonic absorption at wavelengths near 860 nm, and a large change in the photocurrent is observed with applied bias.
引用
收藏
页码：2363 / 2364
页数：2
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