PREPARATION OF LARGE-AREA P-N JUNCTIONS IN SILICON BY SURFACE MELTING

被引：4
|
作者：
BILLIG, E
GASSON, DB
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1957年 / 28卷 / 11期
关键词：
D O I：
10.1063/1.1722625
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1242 / 1245
页数：4
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