EFFECT OF FINITE-ENERGY OF DEFORMATION-POTENTIAL ACOUSTIC PHONONS ON THE TEMPERATURE OF NONEQUILIBRIUM CARRIERS

The effect of the finite energy of the acoustic phonons on the temperature of the non-equilibrium carriers in pure semiconducting materials was investigated here by solving the energy balance equation for the electron phonon system at low lattice temperatures, without making the simplifying approximations of the traditional theory. The calculations were carried out for an isotropic material with a parabolic law of dispersion and a scalar effective mass. The field dependence of the electron temperature is now significantly different from what follows from the traditional theory, in which the phonon energy is neglected in comparison with the carrier energy. It is noted that the effect of the finite energy of the phonons on the carrier temperature at any field is greater the lower the lattice temperature. In comparison to the results of the traditional theory, the agreement of our results with the available experimental observations is found to be distinctly better. For a more detailed fit of the experimental results, the necessity of further refinements of the theory is discussed.