FREQUENCY-RESPONSE THEORY FOR MULTILAYER PHOTODIODES

被引：46
|
作者：
HOLLENHORST, JN
机构：
[1] AT&T Bell Laboratories, Murray Hill
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 1990年 / 8卷 / 04期
关键词：
D O I：
10.1109/50.50759
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An exact solution is developed for the frequency response of photodiodes composed of multiple spatially uniform layers. Each layer is analyzed separately to obtain a set of linear response coefficients. The response of the multilayer diodes is calculated using matrix algebra. Effects of carrier transit, electron and hole tapping, avalanche decay, and finite absorption length are included in the analysis. The results of Emmons and Lucovsky for APD's and p-i-n's are obtained as special cases. The theory is illustrated by applying it to the separated absorption and multiplication avalance photodiode. © 1990 IEEE
引用
收藏
页码：531 / 537
页数：7
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