EPITAXIAL LIFTOFF INGAAS/INP MSM PHOTODETECTORS ON SI

被引：21
作者：
HERRSCHER, M
GRUNDMANN, M
DROGE, E
KOLLAKOWSKI, S
BOTTCHER, EH
BIMBERG, D
机构：
[1] Technische Universität Berlin, Institut für Festkörperphysik I, 10623 Berlin
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 16期
关键词：
EPITAXIAL LIFT-OFF; GALLIUM INDIUM ARSENIDE; INDIUM PHOSPHIDE; METAL-SEMICONDUCTOR-METAL STRUCTURES; PHOTODETECTORS; SILICON;
D O I：
10.1049/el:19950910
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaAs:Fe/InP:Fe metal-semiconductor-metal (MSM) photo-detectors for the long wavelength region were transferred by epitaxial liftoff (ELO) techniques onto an Si substrate. The transferred detectors, with a finger spacing and width of 1.5 and 1.0 mu m, respectively, showed no deterioration in device performance. A fast impulse response with an FWHM of 23 ps and an external quantum efficiency of 48% was measured at a 7V bias and 1.3 mu m wavelength. The leakage current was 250nA at a 7V bias.
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页码：1383 / 1384
页数：2
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