SUBSTRATE-QUALITY, SINGLE-CRYSTAL ZNSE FOR HOMOEPITAXY USING SEEDED PHYSICAL VAPOR TRANSPORT

被引：19

作者：

COTAL, HL ^{[1
]}

MARKEY, BG ^{[1
]}

MCKEEVER, SWS ^{[1
]}

CANTWELL, G ^{[1
]}

HARSCH, WC ^{[1
]}

机构：

[1] EAGLE PICHER RES LABS,MIAMI,OK

来源：

PHYSICA B | 1993年 / 185卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0921-4526(93)90222-R

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We describe the results of optical and electrical characterization of seeded physical vapor transport (SPVT) ZnSe suitable for use as substrates in homoepitaxy. Photoluminescence, Hall measurements, C-V data and thermally simulated conductivity and luminescence (TSC/TL) results are described. As-grown SPVT wafers are of very high crystallinity and of high resistivity. N-type conductivity can be induced by post-growth Zn-extraction, producing wafers with room temperature resistivities as low as 3.82 OMEGA cm and free carrier densities of approximately 1.5 x 10(15) cm-3. The conductivity is limited by the presence of unwanted acceptors due to Cu and Li impurities. Deep level analysis reveals various electron and hole states within the as-grown specimens. Trap depths and capture cross-sections are evaluated for the major centers.

引用

页码：103 / 108

页数：6

共 18 条

[1] HIGH ELECTRON MOBILITY IN ZINC SELENIDE THROUGH LOW-TEMPERATURE ANNEALING [J].