NEW QUASIPARTICLE BOUND TO ISOELECTRONIC TRAP NITROGEN IN GAP - REBUTTAL

被引：5

作者：

DEAN, PJ

FAULKNER, RA

机构：

来源：

SOLID STATE COMMUNICATIONS | 1970年 / 8卷 / 24期

关键词：

D O I：

10.1016/0038-1098(70)90223-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2079 / &

共 13 条

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[3] A NEW QUASIPARTICLE BOND TO ISOELECTRONIC TRAP NITROGEN IN GAP [J].

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[4]

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[5] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J].

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[6] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J].

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[7] EXCITONIC MOLECULE BOUND TO ISOELECTRONIC TRAP NITROGEN IN GALLIUM PHOSPHIDE [J].

FAULKNER, RA ;

MERZ, JL ;

DEAN, PJ .

SOLID STATE COMMUNICATIONS, 1969, 7 (11) :831-&

[8]

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[9]

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[10]

REYNOLDS DC, 1964, 1964 P INT C PHYS SE, P739

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