DIRECT MOVPE GROWTH OF INP ON GAAS SUBSTRATES

We have been able to develop a new useful method for the heteroepitaxial growth on a highly lattice-mismatched substrate by MOVPE successfully. We have found that the surface morphology of InP epitaxial layer grown on a GaAs substrate by MOVPE strongly depends on the supply rate of the group III material. Based on this experimental finding, an InP epitaxial layer with a uniform and mirror-smooth surface has been successfully grown on a 2-inch GaAs (100) substrate. In addition to the surface morphology, we have measured the RHEED pattern, the x-ray diffraction pattern, the Hall mobility, the carrier concentration, and the photoluminescence as functions of the flow rate of the group III carrier gas.