IMPURITY AGGREGATION AT INDIVIDUAL DISLOCATIONS IN GAAS OBSERVED BY MEANS OF A SIMULTANEOUS ELECTRON-BEAM INDUCED CURRENT AND CATHODOLUMINESCENCE TECHNIQUE

被引:9
作者
ECKSTEIN, M
JAKUBOWICZ, A
BODE, M
HABERMEIER, HU
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D O I
10.1063/1.101027
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O59 [应用物理学];
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页码:2659 / 2661
页数:3
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共 15 条
[1]   GAAS SCHOTTKY LIGHT EMITTERS FOR THE STUDY OF SURFACE AVALANCHING AND ELECTRO-LUMINESCENCE [J].
ADACHI, H ;
HARTNAGEL, HL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :427-430
[2]   GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS [J].
ADAMS, AC ;
PRUNIAUX, BR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) :408-414
[3]   A COMPUTERIZED SIGNAL ACQUISITION-SYSTEM FOR THE QUANTITATIVE-EVALUATION OF EBIC AND CL DATA IN A SEM [J].
BODE, M ;
JAKUBOWICZ, A ;
HABERMEIER, HU .
SCANNING, 1988, 10 (05) :169-176
[4]  
BODE M, 1987, MATERIALS SCI MONOGR, V44, P115
[5]  
CASEY HC, 1975, POINT DEFECTS SOLIDS, V2, P163
[6]   EFFECT OF GAAS OR GAXAL1-XAS OXIDE COMPOSITION ON SCHOTTKY-BARRIER BEHAVIOR [J].
GARNER, CM ;
SU, CY ;
SAPERSTEIN, WA ;
JEW, KG ;
LEE, CS ;
PEARSON, GL ;
SPICER, WE .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3376-3382
[7]  
JAKUBOWICZ A, 1987, SCANNING MICROSCOPY, V1, P515
[8]   THEORY OF CATHODOLUMINESCENCE CONTRAST FROM LOCALIZED DEFECTS IN SEMICONDUCTORS [J].
JAKUBOWICZ, A .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2205-2209
[9]   ON THE THEORY OF ELECTRON-BEAM-INDUCED CURRENT CONTRAST FROM POINTLIKE DEFECTS IN SEMICONDUCTORS [J].
JAKUBOWICZ, A .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1194-1199
[10]  
JOHNSON NM, 1906, J VAC SCI TECHNOL, V13, P838