COMPARISON OF AU/NI/GE, AU/PD/GE, AND AU/PT/GE OHMIC CONTACTS TO N-TYPE GAAS

被引：30

作者：

LIN, C ^{[1
]}

LEE, CP ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 01期

关键词：

D O I：

10.1063/1.345300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Au/Ge-based Ohmic contacts to n-type GaAs with an addition of a near-noble-metal, Ni, Pd, or Pt, have been studied. It was found that both the electrical characteristics and the material properties depend very much on this added metal. The material properties of the contacts after thermal alloying were studied using transmission electron microscopy and auger electron microscopy. The contact resistances obtained with different alloying conditions and their reliability have also been studied. It was found that Au/Ni/Ge had the roughest surface while Au/Pd/Ge had the highest contact resistance. The surface morphology was attributed to the difference in the sizes of the grains formed after Ohmic contact alloying. Au/Pt/Ge was found to be the best contact in terms of its electrical characteristics as well as its surface morphology.

引用

页码：260 / 263

页数：4

共 11 条

[1] SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS
CHRISTOU, A
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (02) : 141 - &
[2] ECKHARDT G, 1979, AIP C P, V50, P641
[3] PD-GE CONTACTS TO N-TYPE GAAS
GRINOLDS, HR
ROBINSON, GY
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (09) : 973 - &
[4] RELIABILITY OF AUGE-PT AND AUGE-NI OHMIC CONTACTS ON GAAS
LEE, CP
WELCH, BM
FLEMING, WP
[J]. ELECTRONICS LETTERS, 1981, 17 (12) : 407 - 408
[5] ALLOYING BEHAVIOR OF NI-AU-GE FILMS ON GAAS
OGAWA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 406 - 412
[6] Palmstrom C. J., 1985, Gallium arsenide materials, devices, and circuits, P195
[7] METALLURGICAL AND ELECTRICAL PROPERTIES OF ALLOYED NI-AU-GE FILMS ON N-TYPE GAAS
ROBINSON, GY
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 331 - &
[8] Sands T., 1987, Journal of Materials Research, V2, P262, DOI 10.1557/JMR.1987.0262
[9] WHITTMER M, 1977, J VAC SCI TECHNOL, V14, P935
[10] INVESTIGATION OF AU-GE-NI SYSTEM USED FOR ALLOYED CONTACTS TO GAAS
WITTMER, M
PRETORIUS, R
MAYER, JW
NICOLET, MA
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (05) : 433 - &

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