ELECTRONIC-PROPERTIES OF THE ANNEALED INTERFACE BETWEEN AG AND 7X7 SI(111)

被引：33
|
作者：
BOLMONT, D
CHEN, P
SEBENNE, CA
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 22期
关键词：
D O I：
10.1088/0022-3719/14/22/024
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：3313 / 3319
页数：7
相关论文
共 50 条
  • [21] STRUCTURE OF SI(111)-7X7
    MCRAE, EG
    SURFACE SCIENCE, 1983, 124 (01) : 106 - 128
  • [22] Graphene on Si(111)7x7
    Ochedowski, O.
    Begall, G.
    Scheuschner, N.
    El Kharrazi, M.
    Maultzsch, J.
    Schleberger, M.
    NANOTECHNOLOGY, 2012, 23 (40)
  • [23] Metastable structures and critical thicknesses: Ag on Si(111)-7x7
    Huang, L
    Chey, SJ
    Weaver, JH
    SURFACE SCIENCE, 1998, 416 (1-2) : L1101 - L1106
  • [24] Adsorption and diffusion of a single Ag atom on Si(111)7X7
    Wang, X
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2005, 229 : U740 - U741
  • [25] Fermi-level pinning of Ag on Si(111)-(7x7)
    Hwang, C
    Hwang, CS
    Lee, C
    Lee, SW
    Jeong, IS
    Park, HH
    Tanaka, SI
    Kamada, M
    PHYSICAL REVIEW B, 1995, 52 (23): : 16325 - 16328
  • [26] ELECTRONIC AND GEOMETRIC STRUCTURE OF SI(111)-(7X7) AND SI(001) SURFACES
    HAMERS, RJ
    TROMP, RM
    DEMUTH, JE
    SURFACE SCIENCE, 1987, 181 (1-2) : 346 - 355
  • [27] INITIAL-STAGE OF AG CONDENSATION ON SI(111)7X7
    TOSCH, S
    NEDDERMEYER, H
    PHYSICAL REVIEW LETTERS, 1988, 61 (03) : 349 - 352
  • [28] Atomic structure of the reactive Fe/Si(111)7x7 interface
    Mascaraque, A
    Avila, J
    Teodorescu, C
    Asensio, MC
    Michel, EG
    PHYSICAL REVIEW B, 1997, 55 (12) : R7315 - R7318
  • [29] Atomic structures of Ag on root 3X root 3 Ag/Si(111) and on 7X7 Si(111)
    Natori, A
    Murayama, M
    Yasunaga, H
    SURFACE SCIENCE, 1996, 357 (1-3) : 47 - 50
  • [30] THE STRUCTURE OF A SI(111)7X7 - GE INTERFACE DETERMINED BY SEXAFS
    COMIN, F
    PAOLONE, S
    ROSSI, G
    SURFACE SCIENCE, 1989, 211 (1-3) : 511 - 517
12345