ELECTRICAL CONDUCTION IN P-TYPE INSB BETWEEN 100-DEGREES AND 2-DEGREES-K

被引：38
作者：
PUTLEY, EH
机构：
来源：
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1959年 / 73卷 / 469期
关键词：
D O I：
10.1088/0370-1328/73/1/424
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：128 / 131
页数：4
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[7]   THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF SILICON [J].
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