EFFECT OF STATE FILLING ON THE MODULATION RESPONSE AND THE THRESHOLD CURRENT OF QUANTUM-WELL LASERS

被引：39
作者：
ZHAO, B
CHEN, TR
YARIV, A
机构：
[1] T. J. Watson, Sr. Laboratories of Applied Physics, 128-95, California Institute of Technology, Pasadena
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 16期
关键词：
D O I：
10.1063/1.107154
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of state filling (carrier population of upper subbands of quantum well laser structures) on the optical gain constant is analyzed in conventional separate confinement quantum well lasers. We find that the appreciable population in the states of the optical confinement layers causes a significant lowering of the differential gain. It is pointed out that strain induced reduction of state-filling effects is a probable cause of improved performance in the tensile strained quantum well lasers. The strategy of design for very high frequency and very low threshold current quantum well lasers is addressed.
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页码：1930 / 1932
页数：3
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