ENERGY LEVELS OF A DISORDERED ALLOY

被引：214

作者：

PARMENTER, RH

机构：

来源：

PHYSICAL REVIEW | 1955年 / 97卷 / 03期

关键词：

D O I：

10.1103/PhysRev.97.587

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：587 / 598

页数：12

共 13 条

ALLEN, G .

PHYSICAL REVIEW, 1953, 91 (03) :531-533

[2] TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN SEMICONDUCTORS [J].

FAN, HY .

PHYSICAL REVIEW, 1951, 82 (06) :900-905

[3] BAND STRUCTURE IN DISORDERED ALLOYS AND IMPURITY SEMICONDUCTORS [J].

JAMES, HM ;

GINZBARG, AS .

[4] SOME PROPERTIES OF GERMANIUM-SILICON ALLOYS [J].

JOHNSON, ER ;

CHRISTIAN, SM .

PHYSICAL REVIEW, 1954, 95 (02) :560-561

[5] ELECTRONIC STRUCTURE OF DISORDERED ONE-DIMENSIONAL CHAINS [J].

LANDAUER, R ;

HELLAND, JC .

[6]

LEVITAS, 1954, PHYS REV, V95, P846

[7]

Muto T, 1938, SCI PAP I PHYS CHEM, V34, P377

[8]

Nordheim L, 1931, ANN PHYS-BERLIN, V9, P607

[9]

Nordheim L, 1931, ANN PHYS-BERLIN, V9, P641

[10]

Rose A., 1951, RCA REV, V12, P362