INFLUENCE OF DEPOSITION TEMPERATURE ON COMPOSITION AND GROWTH-RATE OF GAASX P1-X LAYERS

被引：20
作者：
BAN, VS
TIETJEN, JJ
GOSSENBE.HF
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 05期
关键词：
D O I：
10.1063/1.1661533
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2471 / &
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