AN ELECTROCHEMICAL P-N-JUNCTION ETCH-STOP FOR THE FORMATION OF SILICON MICROSTRUCTURES

被引：52

作者：

JACKSON, TN ^{[1
]}

TISCHLER, MA ^{[1
]}

WISE, KD ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTRON PHYS LAB,ANN ARBOR,MI 48109

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 02期

关键词：

D O I：

10.1109/EDL.1981.25334

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：44 / 45

页数：2

共 7 条

[1] ETHYLENE DIAMINE-PYROCATECHOL-WATER MIXTURE SHOWS ETCHING ANOMALY IN BORON-DOPED SILICON
BOHG, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 401 - &
[2] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON
FINNE, RM
KLEIN, DL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 965 - &
[3] LEPSELTER MP, 1966, BELL SYST TECH J, V45, P233
[4] NATHANSON HC, 1978, IEEE T ELECTRON DEV, V25, P1177, DOI 10.1109/T-ED.1978.19248
[5] WAGGENER HA, 1970, BELL SYST TECH J, V50, P473
[6] FABRICATION OF HEMISPHERICAL STRUCTURES USING SEMICONDUCTOR TECHNOLOGY FOR USE IN THERMONUCLEAR FUSION-RESEARCH
WISE, KD
JACKSON, TN
MASNARI, NA
ROBINSON, MG
SOLOMON, DE
WUTTKE, GH
RENSEL, WB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 936 - 939
[7] WISE KD, 1978, IEDM, P96