SOLID SOLUBILITY OF ZN IN SI

被引:14
作者
BLOUKE, MM
HOLONYAK, N
STREETMAN, BG
ZWICKER, HR
机构
关键词
D O I
10.1016/0022-3697(70)90298-2
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:173 / +
页数:1
相关论文
共 13 条
[1]  
BLOUKE MM, IN PRESS
[2]   DOUBLE-ACCEPTOR BEHAVIOR OF ZINC IN SILICON [J].
CARLSON, RO .
PHYSICAL REVIEW, 1957, 108 (06) :1390-1393
[3]   DIFFUSION AND ELECTRICAL BEHAVIOR OF ZINC IN SILICON [J].
FULLER, CS ;
MORIN, FJ .
PHYSICAL REVIEW, 1957, 105 (02) :379-383
[4]   OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELS [J].
HOLONYAK, N ;
BEVACQUA, SF .
APPLIED PHYSICS LETTERS, 1963, 2 (04) :71-73
[5]   DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS [J].
HOLONYAK, N .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12) :2421-&
[6]  
LEBEDEV AA, 1969, SOV PHYS SEMICOND+, V2, P1295
[7]   DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J].
LUDWIG, GW ;
WATTERS, RL .
PHYSICAL REVIEW, 1956, 101 (06) :1699-1701
[8]  
MAHER AT, 1969, IEEE T ELECTR DEVEL, VED16
[9]  
PUTLEY EH, 1968, HALL EFFECT SEMICOND
[10]   STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR [J].
SHOCKLEY, W ;
LAST, JT .
PHYSICAL REVIEW, 1957, 107 (02) :392-396