OXYGEN FORMATION IN GAMMA-RAY IRRADIATION OF FE-2(+)-CU-2(+) SOLUTIONS

被引:35
作者
BJERGBAKKE, E
HART, EJ
机构
关键词
D O I
10.2307/3573120
中图分类号
Q [生物科学];
学科分类号
07 ; 0710 ; 09 ;
摘要
引用
收藏
页码:261 / +
页数:1
相关论文
共 50 条
[41]   Influences of thickness and gamma-ray irradiation on the frictional and electronic properties of WSe2 nanosheets [J].
Wu, Xiongli ;
Zheng, Xuejun ;
Zhang, Guangbiao ;
Dong, Hui ;
Chen, Xinnan .
AIP ADVANCES, 2021, 11 (04)
[42]   SYNTHESIS OF SEVERAL TERTIARY ALCOHOLS FROM PROPANOL-2 AND ETHYLENE BY GAMMA-RAY IRRADIATION [J].
HIROTA, K ;
HATADA, M .
BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, 1961, 34 (11) :1644-1648
[43]   CROSS-SECTION OF FORMATION OF A FRENKEL PAIR IN SEMICONDUCTORS DUE TO GAMMA-RAY IRRADIATION [J].
ABDULLAEV, A ;
VITOVSKII, NA ;
MASHOVETS, TV .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11) :1432-1433
[44]   Spectral analysis of gamma-ray bursts in GLAST Data Challenge 2 simulated gamma-ray sky [J].
Komin, N. .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 2006, 121 (12) :1497-1499
[45]   Radiation Hardness of Ga2O3 MOSFETs Against Gamma-Ray Irradiation [J].
Wong, Man Hoi ;
Takeyama, Akinori ;
Makino, Takahiro ;
Ohshima, Takeshi ;
Sasaki, Kohei ;
Kuramata, Akito ;
Yamakoshi, Shigenobu ;
Higashiwaki, Masataka .
2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2017,
[46]   Peroxynitrite formation by 60Co gamma-ray irradiation of alkali nitrate crystals [J].
Anan'ev, V ;
Kriger, L ;
Poroshina, M .
CHEMICAL PHYSICS LETTERS, 2002, 362 (5-6) :554-558
[47]   FORMATION OF THERMAL DONORS DURING GAMMA-RAY IRRADIATION OF N-TYPE SILICON [J].
STARCHIK, MI .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (01) :128-&
[48]   EFFICIENCY OF RADIATION DEFECT FORMATION IN SILICON AT VARIOUS INTENSITIES OF ELECTRON AND GAMMA-RAY IRRADIATION [J].
LUGAKOV, PF ;
LUKYANITSA, VV .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (02) :521-528
[49]   THERMO-LUMINESCENCE OF ZNO-CU, LA UNDER UV AND GAMMA-RAY IRRADIATION [J].
DIWAN, D ;
BHUSHAN, S ;
KATHURIA, SP .
CRYSTAL RESEARCH AND TECHNOLOGY, 1984, 19 (09) :1265-1269
[50]   THERMAL OXYGEN-CONTAINING DONORS FORMED IN SILICON AS A RESULT OF HOT GAMMA-RAY IRRADIATION [J].
EMTSEV, VV ;
DALUDA, YN ;
SHAKHOVTSOV, VI ;
SHINDICH, VL ;
NEIMASH, VB ;
ANTONENKO, RS ;
SCHMALZ, K .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (02) :232-233