FUNDAMENTALS OF MBE

被引：4

作者：

ARTHUR, JR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 02期

关键词：

D O I：

10.1116/1.569925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：273 / 274

页数：2

共 31 条

[1] VELOCITY DISTRIBUTIONS OF AS2 AND AS4 SCATTERED FROM GAAS [J].

ARTHUR, JR ;

BROWN, TR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :200-203

[2] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J].

ARTHUR, JR ;

LEPORE, JJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :545-&

[3] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J].

ARTHUR, JR .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :4032-&

[4] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].

ARTHUR, JR .

SURFACE SCIENCE, 1974, 43 (02) :449-461

[5] NATIVE DEFECTS AND STOICHIOMETRY IN GAALAS [J].

BLOM, GM .

JOURNAL OF CRYSTAL GROWTH, 1976, 36 (01) :125-137

[6]

CABRERA N, 1949, DIS FARADAY SOC, V5, P40

[7]

CALAWA AR, UNPUBLISHED

[8] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].

CHANG, CA ;

LUDEKE, R ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761

[9]

CHANG LL, 1975, EPITAXIAL GROWTH A

[10]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

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