PREPARATION AND OPTICAL-PROPERTIES OF ZNSE EPITAXIAL LAYERS BY A CLOSE-SPACED TECHNIQUE

The epitaxial growth by a close-spaced technique of ZnSe layers on four kinds of substrate (GaAs, GaAsP, Ge, and Si), was investigated. The growth rates of the layers on GaAs, GaAsP, and Ge were about 0.9, 0.8, and 0.5 µm/h respectively. GaAs and GaAsP were the most suitable materials as substrates for ZnSe epitaxial growth. In photoluminescence measurements at RT and 77 K, an SA luminescence and a green emission band were obtained from all as-grown layers on GaAs, GaAsP, and Ge substrates. The green emission was studied by Cu impurity analysis, variations of the growth temperature, and Ar+ ion implantation. From these analysis, it is found that the green emission is due not only to Cu impurities but also to defects. A sharp blue emission line peaking at about 0.458 µm was observed from the spectrum of a layer on Si only. © 1979 The Japan Society of Applied Physics.