WARM ELECTRON EFFECTS IN GAAS AT LOW TEMPERATURES

被引:6
作者
HUGHES, FD
TREE, RJ
机构
来源
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1970年 / 3卷 / 09期
关键词
D O I
10.1088/0022-3719/3/9/013
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1943 / &
相关论文
共 13 条
[1]  
AKASAKI I, 1968, 9TH P INT C PHYS SEM, P787
[2]  
Brooks H., 1955, ADV ELECTRONICS ELEC, V7, P87
[3]   GUNN EFFECT [J].
BUTCHER, PM .
REPORTS ON PROGRESS IN PHYSICS, 1967, 30 :97-+
[4]   TEMPERATURE DEPENDENCE OF MICROWAVE DIELECTRIC CONSTANT OF GAAS LATTICE [J].
CHAMPLIN, KS ;
GLOVER, GH .
APPLIED PHYSICS LETTERS, 1968, 12 (07) :231-&
[5]  
CHYNOWETH A G., 1968, SEMICONDUCTORS SEMIM, V4, P263
[6]  
CONWELL EM, 1967, SOLID STATE PHYSICS, V2
[7]   ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GALLIUM ARSENIDE [J].
EDDOLLS, DV .
PHYSICA STATUS SOLIDI, 1966, 17 (01) :67-&
[8]   BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].
EHRENREICH, H .
PHYSICAL REVIEW, 1960, 120 (06) :1951-1963
[9]   DETERMINATION OF EFFECTIVE IONIC CHARGE OF GALLIUM ARSENIDE FROM DIRECT MEASUREMENTS OF DIELECTRIC CONSTANT [J].
HAMBLETON, K ;
HOLEMAN, BR ;
HILSUM, C .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 77 (498) :1147-&
[10]   ELECTRICAL PROPERTIES OF N-NORMAL TYPE GALLIUM ARSENIDE [J].
OLIVER, DJ .
PHYSICAL REVIEW, 1962, 127 (04) :1045-&