HIGH ASPECT RATIO 0.1 MU-M TUNGSTEN GATES FOR INGAAS/INAIAS HETEROJUNCTION TRANSISTORS

被引：12

作者：

TENNANT, DM

SHUNK, SC

FEUER, MD

KUO, JM

BEHRINGER, RE

CHANG, TY

EPWORTH, RW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1836 / 1840

页数：5

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[7] ELECTRON-BEAM FABRICATION OF HIGH-PERFORMANCE INGAAS/INAIAS HETEROJUNCTION INSULATED GATE FIELD-EFFECT TRANSISTORS WITH SUB-MICRON REFRACTORY AIRBRIDGE GATES [J].