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MATERIALS FOR OPTOELECTRONIC AND PHOTONIC INTEGRATED-CIRCUITS
被引:5
作者
:
HENNING, ID
论文数:
0
引用数:
0
h-index:
0
HENNING, ID
机构
:
来源
:
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
|
1989年
/ 19卷
/ 1-2期
关键词
:
D O I
:
10.1016/0146-3535(89)90009-9
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:1 / 20
页数:20
相关论文
共 22 条
[1]
GAAS-MESFETS FABRICATED ON INP SUBSTRATES
[J].
ASANO, K
论文数:
0
引用数:
0
h-index:
0
ASANO, K
;
KASAHARA, K
论文数:
0
引用数:
0
h-index:
0
KASAHARA, K
;
ITOH, T
论文数:
0
引用数:
0
h-index:
0
ITOH, T
.
IEEE ELECTRON DEVICE LETTERS,
1987,
8
(07)
:289
-290
[2]
LOW-THRESHOLD (APPROXIMATELY-600 A/CM2 AT ROOM-TEMPERATURE) GAAS/AIGAAS LASERS ON SI (100)
[J].
CHEN, HZ
论文数:
0
引用数:
0
h-index:
0
CHEN, HZ
;
GHAFFARI, A
论文数:
0
引用数:
0
h-index:
0
GHAFFARI, A
;
WANG, H
论文数:
0
引用数:
0
h-index:
0
WANG, H
;
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
MORKOC, H
;
YARIV, A
论文数:
0
引用数:
0
h-index:
0
YARIV, A
.
APPLIED PHYSICS LETTERS,
1987,
51
(17)
:1320
-1321
[3]
Choi H. K., 1987, Optoelectronics - Devices and Technologies, V2, P265
[4]
INTEGRATED EXTERNAL CAVITY LASER
[J].
DUTTA, NK
论文数:
0
引用数:
0
h-index:
0
DUTTA, NK
;
CELLA, T
论文数:
0
引用数:
0
h-index:
0
CELLA, T
;
PICCIRILLI, AB
论文数:
0
引用数:
0
h-index:
0
PICCIRILLI, AB
;
BROWN, RL
论文数:
0
引用数:
0
h-index:
0
BROWN, RL
.
APPLIED PHYSICS LETTERS,
1986,
49
(19)
:1227
-1229
[5]
GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
[J].
FEKETA, D
论文数:
0
引用数:
0
h-index:
0
FEKETA, D
;
CHAN, KT
论文数:
0
引用数:
0
h-index:
0
CHAN, KT
;
BALLANTYNE, JM
论文数:
0
引用数:
0
h-index:
0
BALLANTYNE, JM
;
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
EASTMAN, LF
.
APPLIED PHYSICS LETTERS,
1986,
49
(24)
:1659
-1660
[6]
GAAS OPTOELECTRONIC INTEGRATED RECEIVER WITH HIGH-OUTPUT FAST-RESPONSE CHARACTERISTICS
[J].
HAMAGUCHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Ltd., Atsugi 243-01, 10–1, MorinosatoWakamiya
HAMAGUCHI, H
;
MAKIUCHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Ltd., Atsugi 243-01, 10–1, MorinosatoWakamiya
MAKIUCHI, M
;
KUMAI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Ltd., Atsugi 243-01, 10–1, MorinosatoWakamiya
KUMAI, T
;
WADA, O
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Ltd., Atsugi 243-01, 10–1, MorinosatoWakamiya
WADA, O
.
IEEE ELECTRON DEVICE LETTERS,
1987,
8
(01)
:39
-41
[7]
LOW-LEAKAGE INGAAS PHOTODIODES GROWN ON GAAS SUBSTRATES USING A GRADED STRAINED-LAYER SUPERLATTICE
[J].
HODSON, PD
论文数:
0
引用数:
0
h-index:
0
HODSON, PD
;
WALLIS, RH
论文数:
0
引用数:
0
h-index:
0
WALLIS, RH
;
DAVIES, JI
论文数:
0
引用数:
0
h-index:
0
DAVIES, JI
.
ELECTRONICS LETTERS,
1987,
23
(06)
:273
-275
[8]
LOW DARK CURRENT GAAS METAL-SEMICONDUCTOR METAL (MSM) PHOTODIODES USING WSIX CONTACTS
[J].
ITO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Ltd, Atsugi, Jpn, Fujitsu Ltd, Atsugi, Jpn
ITO, M
;
WADA, O
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Ltd, Atsugi, Jpn, Fujitsu Ltd, Atsugi, Jpn
WADA, O
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1986,
22
(07)
:1073
-1077
[9]
MONOLITHIC INTEGRATION OF INGAAS P-I-N PHOTODETECTOR WITH FULLY ION-IMPLANTED INP JFET AMPLIFIER
[J].
KIM, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T MICROELECTR,READING,PA 19604
AT&T MICROELECTR,READING,PA 19604
KIM, SJ
;
GUTH, G
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T MICROELECTR,READING,PA 19604
AT&T MICROELECTR,READING,PA 19604
GUTH, G
;
VELLACOLEIRO, GP
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T MICROELECTR,READING,PA 19604
AT&T MICROELECTR,READING,PA 19604
VELLACOLEIRO, GP
;
SEABURY, CW
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T MICROELECTR,READING,PA 19604
AT&T MICROELECTR,READING,PA 19604
SEABURY, CW
;
SPONSLER, WA
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T MICROELECTR,READING,PA 19604
AT&T MICROELECTR,READING,PA 19604
SPONSLER, WA
;
RHOADES, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T MICROELECTR,READING,PA 19604
AT&T MICROELECTR,READING,PA 19604
RHOADES, BJ
.
IEEE ELECTRON DEVICE LETTERS,
1988,
9
(09)
:447
-449
[10]
HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
[J].
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
.
PROCEEDINGS OF THE IEEE,
1982,
70
(01)
:13
-25
←
1
2
3
→
共 22 条
[1]
GAAS-MESFETS FABRICATED ON INP SUBSTRATES
[J].
ASANO, K
论文数:
0
引用数:
0
h-index:
0
ASANO, K
;
KASAHARA, K
论文数:
0
引用数:
0
h-index:
0
KASAHARA, K
;
ITOH, T
论文数:
0
引用数:
0
h-index:
0
ITOH, T
.
IEEE ELECTRON DEVICE LETTERS,
1987,
8
(07)
:289
-290
[2]
LOW-THRESHOLD (APPROXIMATELY-600 A/CM2 AT ROOM-TEMPERATURE) GAAS/AIGAAS LASERS ON SI (100)
[J].
CHEN, HZ
论文数:
0
引用数:
0
h-index:
0
CHEN, HZ
;
GHAFFARI, A
论文数:
0
引用数:
0
h-index:
0
GHAFFARI, A
;
WANG, H
论文数:
0
引用数:
0
h-index:
0
WANG, H
;
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
MORKOC, H
;
YARIV, A
论文数:
0
引用数:
0
h-index:
0
YARIV, A
.
APPLIED PHYSICS LETTERS,
1987,
51
(17)
:1320
-1321
[3]
Choi H. K., 1987, Optoelectronics - Devices and Technologies, V2, P265
[4]
INTEGRATED EXTERNAL CAVITY LASER
[J].
DUTTA, NK
论文数:
0
引用数:
0
h-index:
0
DUTTA, NK
;
CELLA, T
论文数:
0
引用数:
0
h-index:
0
CELLA, T
;
PICCIRILLI, AB
论文数:
0
引用数:
0
h-index:
0
PICCIRILLI, AB
;
BROWN, RL
论文数:
0
引用数:
0
h-index:
0
BROWN, RL
.
APPLIED PHYSICS LETTERS,
1986,
49
(19)
:1227
-1229
[5]
GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
[J].
FEKETA, D
论文数:
0
引用数:
0
h-index:
0
FEKETA, D
;
CHAN, KT
论文数:
0
引用数:
0
h-index:
0
CHAN, KT
;
BALLANTYNE, JM
论文数:
0
引用数:
0
h-index:
0
BALLANTYNE, JM
;
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
EASTMAN, LF
.
APPLIED PHYSICS LETTERS,
1986,
49
(24)
:1659
-1660
[6]
GAAS OPTOELECTRONIC INTEGRATED RECEIVER WITH HIGH-OUTPUT FAST-RESPONSE CHARACTERISTICS
[J].
HAMAGUCHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Ltd., Atsugi 243-01, 10–1, MorinosatoWakamiya
HAMAGUCHI, H
;
MAKIUCHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Ltd., Atsugi 243-01, 10–1, MorinosatoWakamiya
MAKIUCHI, M
;
KUMAI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Ltd., Atsugi 243-01, 10–1, MorinosatoWakamiya
KUMAI, T
;
WADA, O
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Ltd., Atsugi 243-01, 10–1, MorinosatoWakamiya
WADA, O
.
IEEE ELECTRON DEVICE LETTERS,
1987,
8
(01)
:39
-41
[7]
LOW-LEAKAGE INGAAS PHOTODIODES GROWN ON GAAS SUBSTRATES USING A GRADED STRAINED-LAYER SUPERLATTICE
[J].
HODSON, PD
论文数:
0
引用数:
0
h-index:
0
HODSON, PD
;
WALLIS, RH
论文数:
0
引用数:
0
h-index:
0
WALLIS, RH
;
DAVIES, JI
论文数:
0
引用数:
0
h-index:
0
DAVIES, JI
.
ELECTRONICS LETTERS,
1987,
23
(06)
:273
-275
[8]
LOW DARK CURRENT GAAS METAL-SEMICONDUCTOR METAL (MSM) PHOTODIODES USING WSIX CONTACTS
[J].
ITO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Ltd, Atsugi, Jpn, Fujitsu Ltd, Atsugi, Jpn
ITO, M
;
WADA, O
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Ltd, Atsugi, Jpn, Fujitsu Ltd, Atsugi, Jpn
WADA, O
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1986,
22
(07)
:1073
-1077
[9]
MONOLITHIC INTEGRATION OF INGAAS P-I-N PHOTODETECTOR WITH FULLY ION-IMPLANTED INP JFET AMPLIFIER
[J].
KIM, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T MICROELECTR,READING,PA 19604
AT&T MICROELECTR,READING,PA 19604
KIM, SJ
;
GUTH, G
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T MICROELECTR,READING,PA 19604
AT&T MICROELECTR,READING,PA 19604
GUTH, G
;
VELLACOLEIRO, GP
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T MICROELECTR,READING,PA 19604
AT&T MICROELECTR,READING,PA 19604
VELLACOLEIRO, GP
;
SEABURY, CW
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T MICROELECTR,READING,PA 19604
AT&T MICROELECTR,READING,PA 19604
SEABURY, CW
;
SPONSLER, WA
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T MICROELECTR,READING,PA 19604
AT&T MICROELECTR,READING,PA 19604
SPONSLER, WA
;
RHOADES, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T MICROELECTR,READING,PA 19604
AT&T MICROELECTR,READING,PA 19604
RHOADES, BJ
.
IEEE ELECTRON DEVICE LETTERS,
1988,
9
(09)
:447
-449
[10]
HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
[J].
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
.
PROCEEDINGS OF THE IEEE,
1982,
70
(01)
:13
-25
←
1
2
3
→