EXPERIMENTAL AND THEORETICAL-ANALYSIS OF RESONANT TUNNELING THROUGH A-SI-H/A-SI1-XCX-H DOUBLE-BARRIER IN P-I-N STRUCTURE

被引:1
|
作者
JIANG, YL
HWANG, HL
机构
来源
AMORPHOUS SILICON TECHNOLOGY - 1989 | 1989年 / 149卷
关键词
D O I
10.1557/PROC-149-687
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:687 / 692
页数:6
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