TETRAGONAL DISTORTION IN HETEROEPITAXIAL LAYERS - GE ON GAAS

被引：11

作者：

HAGEN, W

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 43卷 / 06期

关键词：

D O I：

10.1016/0022-0248(78)90154-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：739 / 744

页数：6

共 9 条

[1]

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[6]

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[7] MISORIENTATION AND TETRAGONAL DISTORTION IN HETEROEPITAXIAL VAPOR-GROWN III-V STRUCTURES [J].

OLSEN, GH ;

SMITH, RT .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (02) :739-747

[8] EPITAXIAL DEPOSITION OF GERMANIUM ONTO SEMI-INSULATING GAAS [J].

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[9] LATTICE DISTORTION IN LPE GA1-XALXAS LAYERS [J].

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