The Study of the Effects of Ion Chemical Activity on Conductivity of Poly(Dimethylsilylene-Co-Methylphenylsilylene)

被引:0
作者
Jodeh, Shehdeh [1 ]
机构
[1] An Najah Natl Univ, Dept Chem, POB 7, Nablus, Palestine
来源
JOURNAL OF ACTIVE AND PASSIVE ELECTRONIC DEVICES | 2007年 / 2卷 / 01期
关键词
implantation; conductivity; backscattering; thermal equilibrium; doping;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effects of ion implantation on the electrical and structural properties of poly(dimethylsilylene-co-methylphenylsilylene), DMMPS, thin films have been investigated. Ionic species of krypton, arsenic, fluorine, ch1orine, and sulfur were implanted at energies ranging from 35 to 200 keV and with doses of up to 1 x 10(16) ion/cm(2). The conductivity of the polymer increased, upon implantation, reaching a maximum value of 9.6 x 10(-6) (Omega cm)-l for the case of arsenic ion at a dose of 1 x 10(16) ion/cm(2) and energy of 100 keV. The results showed that ion implantation induced conduction, in DMMPS, was primarily due to structural modifications of the material brought about by the energetic ions. Infrared analysis and Auger electron spectroscopy showed evidence for the formation of a silicon carbide-like structure upon implantation.
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页码:25 / 42
页数:18
相关论文
共 15 条
  • [1] ION-IMPLANTATION STUDIES OF (SN)X AND (CH)X
    ALLEN, WN
    BRANT, P
    CAROSELLA, CA
    DECORPO, JJ
    EWING, CT
    SAALFELD, FE
    WEBER, DC
    [J]. SYNTHETIC METALS, 1980, 1 (02) : 151 - 159
  • [2] HIGHLY CONDUCTIVE POLY(PHENYLENE SULFIDE) PREPARED BY HIGH-ENERGY ION IRRADIATION
    BARTKO, J
    HALL, BO
    SCHOCH, KF
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1111 - 1116
  • [3] Chu W.K., 1978, BACKSCATTERING SPECT, V1st ed., DOI 10.1016/B978-0-12-173850-1.50008-9
  • [4] Dresselhaus M. S., 1984, MRS S ION IMPLANTATI, V27, P413
  • [5] LARGE CONDUCTIVITY CHANGES IN ION-BEAM IRRADIATED ORGANIC THIN-FILMS
    FORREST, SR
    KAPLAN, ML
    SCHMIDT, PH
    VENKATESAN, T
    LOVINGER, AJ
    [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 708 - 710
  • [6] CHEMICAL EFFECTS IN AUGER-ELECTRON SPECTROSCOPY
    HAAS, TW
    GRANT, JT
    DOOLEY, GJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1853 - &
  • [7] OPTICAL AND ELECTRICAL-PROPERTIES OF ION-BEAM-IRRADIATED FILMS OF ORGANIC MOLECULAR-SOLIDS AND POLYMERS
    KAPLAN, ML
    FORREST, SR
    SCHMIDT, PH
    VENKATESAN, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (03) : 732 - 742
  • [8] Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystal
    Karabulut, O
    Parlak, M
    Yilmaz, K
    Turan, R
    Akinoglu, BG
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2003, 38 (12) : 1071 - 1076
  • [9] Structural disorder in ion-implanted AlxGa1-xN
    Kucheyev, SO
    Williams, JS
    Zou, J
    Li, G
    Jagadish, C
    Manasreh, MO
    Pophristic, M
    Guo, S
    Ferguson, IT
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (05) : 787 - 789
  • [10] LINHARD J, 1963, MAT FYS MEDD DAN VID, V33, P14