DETERMINATION OF INTERSTITIAL OXYGEN CONCENTRATION IN OXYGEN-PRECIPITATED SILICON-WAFERS BY LOW-TEMPERATURE HIGH-RESOLUTION INFRARED-SPECTROSCOPY

被引：3

作者：

SAITO, H

SHIRAI, H

机构：

[1] Toshiba Ceramics Co. Ltd., Research and Development Center, Hadano, Kanagawa, 257, SO Soya

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 9A期

关键词：

INFRARED SPECTRUM; OXYGEN PRECIPITATION; INTERSTITIAL OXYGEN CONCENTRATION; CZOCHRALSKI-GROWN SILICON WAFER; LOW-TEMPERATURE SPECTRUM; HIGH-RESOLUTION SPECTRUM; P-POLARIZED BREWSTER ANGLE INCIDENCE;

D O I：

10.1143/JJAP.34.L1097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The low-temperature high-resolution infrared absorption spectra have been measured on oxygen-precipitated Czochralski-grown silicon wafers in the 1100 cm(-1) range at approximately 13.8 K, using the p-polarized Brewster angle incidence configuration. The multiple peaks due to interstitial oxygen have been successfully observed without interference fringes. It has been verified that the interstitial oxygen concentration in oxygen-precipitated wafers is precisely determined by low-temperature high-resolution p-polarized Brewster angle incidence infrared spectroscopy.

引用

页码：L1097 / L1099

页数：3

共 12 条

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