LOCAL ORDERING AND LATERAL GROWTH OF INITIAL THERMAL OXIDE OF SI(001)

被引：16
|
作者：
UDAGAWA, M [1 ]
NIWA, M [1 ]
SUMITA, I [1 ]
机构：
[1] MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI,KANAGAWA 214,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期
关键词：
SI; SI(001)2X1 SURFACE; THERMAL OXIDATION; O-2; INTERFACE; SCANNING TUNNELING MICROSCOPY;
D O I：
10.1143/JJAP.33.375
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The initial stages of the thermal (600 degrees C) oxide growth of Si (001) clean surfaces were studied by scanning tunneling microscopy (STM). Oxide growth starts from both step edges and terraces. At 120L, almost the entire surface was covered by oxides. Steps could still be identified, and the apparent roughness had a local minimum at this O-2 exposure. These results indicate that the first layer is oxidized quite uniformly. Some local orderings of the initial oxides were observed on the terraces, which may enhance the oxide growth in the lateral (parallel to the surface) direction.
引用
收藏
页码：375 / 378
页数：4
相关论文
共 50 条
  • [31] On the origin of the kinetic growth instability of homoepitaxy on Si(001)
    Myslivecek, J
    Schelling, C
    Springholz, G
    Schäffler, F
    Voigtländer, B
    Smilauer, P
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 410 - 414
  • [32] Energetics of void enlargement in thermally grown ultrathin Si-oxide on Si(001)
    Tang, SP
    Wei, Y
    Wallace, RM
    SURFACE SCIENCE, 1997, 387 (1-3) : L1057 - L1061
  • [33] Effect of the interface morphology on the lateral electron transport in (001) GaP/Si heterostructures
    Ostheim, L.
    Klar, P. J.
    Moryson, Y.
    Rohnke, M.
    Beyer, A.
    Volk, M.
    Munde, M.
    Stolz, W.
    Volz, K.
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (21)
  • [34] Co-adsorption patterns of NH3 on Si(001): Comment on "The ordering of the adsorbed NH3 molecules across the Si dimer rows on the Si(001) surface"
    Owen, J. H. G.
    Bowler, D. R.
    SURFACE SCIENCE, 2008, 602 (24) : 3760 - 3762
  • [35] Growth of iron oxide on Cu(001) at elevated temperature
    Karunamuni, J
    Kurtz, RL
    Stockbauer, RL
    SURFACE SCIENCE, 1999, 442 (02) : 223 - 238
  • [36] Structural and phase transformations during initial stages of copper condensation on Si(001)
    Plyusnin, N. I.
    Il'yashchenko, V. M.
    Kitan, S. A.
    Tarima, N. A.
    JOURNAL OF SURFACE INVESTIGATION, 2011, 5 (04): : 734 - 745
  • [37] Sb-mediated Si heteroepitaxial growth on Ge(001)
    Wang, J
    Li, M
    Altman, EI
    SURFACE SCIENCE, 2004, 560 (1-3) : 12 - 26
  • [38] Lateral Germanium Growth for Local GeOI Fabrication
    Yamamoto, Yuji
    Schubert, Markus Andreas
    Reich, Christian
    Tillack, Bernd
    SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES, 2014, 64 (06): : 649 - 657
  • [39] 2-DIMENSIONAL GROWTH AND DECOMPOSITION OF INITIAL THERMAL SIO2 LAYER ON SI(100)
    HORIE, T
    TAKAKUWA, Y
    MIYAMOTO, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (08): : 4684 - 4690
  • [40] Endotaxial growth of CoSi2 nanowires on Si(001) surface: The influence of surface reconstruction
    Ong, Bin Leong
    Ong, Sheau Wei
    Tok, Eng Soon
    SURFACE SCIENCE, 2016, 647 : 84 - 89
12345