LOCAL ORDERING AND LATERAL GROWTH OF INITIAL THERMAL OXIDE OF SI(001)

被引：16
|
作者：
UDAGAWA, M [1 ]
NIWA, M [1 ]
SUMITA, I [1 ]
机构：
[1] MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI,KANAGAWA 214,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期
关键词：
SI; SI(001)2X1 SURFACE; THERMAL OXIDATION; O-2; INTERFACE; SCANNING TUNNELING MICROSCOPY;
D O I：
10.1143/JJAP.33.375
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The initial stages of the thermal (600 degrees C) oxide growth of Si (001) clean surfaces were studied by scanning tunneling microscopy (STM). Oxide growth starts from both step edges and terraces. At 120L, almost the entire surface was covered by oxides. Steps could still be identified, and the apparent roughness had a local minimum at this O-2 exposure. These results indicate that the first layer is oxidized quite uniformly. Some local orderings of the initial oxides were observed on the terraces, which may enhance the oxide growth in the lateral (parallel to the surface) direction.
引用
收藏
页码：375 / 378
页数：4
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