INSITU SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATION OF GAAS-SURFACES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：16
作者：
ISU, T
HATA, M
WATANABE, A
KATAYAMA, Y
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期
关键词：
D O I：
10.1116/1.584631
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：714 / 719
页数：6
相关论文
共 11 条
[1]   GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2074-&
[2]   ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J].
CLARKE, S ;
VVEDENSKY, DD .
PHYSICAL REVIEW LETTERS, 1987, 58 (21) :2235-2238
[3]  
HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1
[4]   OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].
ICHIKAWA, M ;
DOI, T .
APPLIED PHYSICS LETTERS, 1987, 50 (17) :1141-1143
[5]   REAL-TIME OBSERVATION OF GAAS (001) SURFACES DURING MOLECULAR-BEAM EPITAXY BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].
ISU, T ;
WATANABE, A ;
HATA, M ;
KATAYAMA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2259-L2261
[6]   RHEED STUDIES OF HETEROJUNCTION AND QUANTUM-WELL FORMATION DURING MBE GROWTH - FROM MULTIPLE-SCATTERING TO BAND OFFSETS [J].
JOYCE, BA ;
DOBSON, PJ ;
NEAVE, JH ;
WOODBRIDGE, K ;
ZHANG, J ;
LARSEN, PK ;
BOLGER, B .
SURFACE SCIENCE, 1986, 168 (1-3) :423-438
[7]   DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].
NEAVE, JH ;
JOYCE, BA ;
DOBSON, PJ ;
NORTON, N .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8
[8]   STRUCTURE AND STOICHIOMETRY OF (100)-GAAS SURFACES DURING MOLECULAR-BEAM EPITAXY [J].
NEAVE, JH ;
JOYCE, BA .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (04) :387-397
[9]   MICROSCOPY OF SURFACES AND APPLICATIONS TO MOLECULAR-BEAM EPITAXY [J].
PETROFF, PM ;
CHEN, CH ;
WERDER, DJ .
ULTRAMICROSCOPY, 1985, 17 (03) :185-191
[10]   REFLECTION ELECTRON-MICROSCOPIC OBSERVATION OF HIGH-TEMPERATURE GROWN GAAS-SURFACES OF MOLECULAR-BEAM EPITAXY [J].
SHIMIZU, N ;
MUTO, S .
APPLIED PHYSICS LETTERS, 1987, 51 (10) :743-745
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