NOTE ON ELECTRONIC GAP STATES IN CHALCOGENIDE GLASSES

被引：2

作者：

SCHAVER, F ^{[1
]}

ZALUDEK, V ^{[1
]}

SMID, V ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST SOLID STATE PHYS, CUKROVARNICKA 10, CS-16253 PRAGUE 6, CZECHOSLOVAKIA

来源：

关键词：

D O I：

10.1007/BF01596050

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：705 / 708

页数：4

共 8 条

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[2] FRITZSCHE H, 1973, ELECTRONIC STRUCTURA, P53
[3] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS
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[4] OVSHINSKY SR, 1977, 7TH P INT C AM LIQ S, P519
[5] STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR
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[6] AMORPHOUS SILICON P-N-JUNCTION
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[J]. APPLIED PHYSICS LETTERS, 1976, 28 (02) : 105 - 107
[7] STATES IN GAP IN GLASSY SEMICONDUCTORS
STREET, RA
MOTT, NF
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (19) : 1293 - 1296
[8] STREET RA, 1976, 6TH P INT C AM LIQ S, P116