PHOTO-IONIZATION CROSS-SECTION AND THRESHOLD OF INTERFACE STATES IN GAAS AND INP MOS STRUCTURES

被引：0

作者：

HASEGAWA, H

SAWADA, T

机构：

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1982年 / 63期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：335 / 340

页数：6

共 19 条

[1] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J].

BEBB, HB ;

CHAPMAN, RA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) :2087-&

[2] APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J].

BEBB, HB .

PHYSICAL REVIEW, 1969, 185 (03) :1116-&

[3] PHOTO-IONIZATION CROSS-SECTION AND DENSITY OF INTERFACE STATES IN MOS STRUCTURES [J].

GREVE, DW ;

DAHLKE, WE .

APPLIED PHYSICS LETTERS, 1980, 36 (12) :1002-1004

[4] DYNAMIC PROPERTIES OF INTERFACE-STATE BANDS IN GAAS ANODIC MOS SYSTEM [J].

HASEGAWA, H ;

SAWADA, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1478-1482

[5] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J].

HASEGAWA, H ;

HARTNAGEL, HL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :713-723

[6] ELECTRICAL MODELING OF COMPOUND SEMICONDUCTOR INTERFACE FOR FET DEVICE ASSESSMENT [J].

HASEGAWA, H ;

SAWADA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1055-1061

[7]

Hasegawa H., 1980, Journal of the Physical Society of Japan, V49, P1125

[8] ION-ELECTRON (CONFIGURATIONAL) INTERFACE STATES IN MOS STRUCTURES [J].

KAMIENIECKI, E .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :807-809

[9]

KAMIENIECKI E, 1978, 1978 P INT TOP C PHY, P417

[10] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J].

Lucovsky, G. .

SOLID STATE COMMUNICATIONS, 1965, 3 (09) :299-302

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