INTERVALENCE BAND ABSORPTION-COEFFICIENT MEASUREMENTS IN BULK LAYER, STRAINED AND UNSTRAINED MULTIQUANTUM-WELL 1.55 MU-M SEMICONDUCTOR-LASERS

被引：37

作者：

JOINDOT, I ^{[1
]}

BEYLAT, JL ^{[1
]}

机构：

[1] ALCATEL ALSTHOM RECH,F-91460 MARCOUSSIS,FRANCE

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 07期

关键词：

LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19930405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements are reported of intervalence band absorption (IVBA) coefficient k0 in three types of active layer structure: bulk, unstrained (MQW) and strained multiquantum wells. The IVBA measurements are performed by observing the spontaneous emission from the uncleaved facets of DCPBH Fabry-Perot lasers k0 = (3-7 +/- 0-3) x 10(-17) cm2 is obtained for bulk, (1.4 +/- 0-2) x 10(-16) cm2 for MQW unstrained and (3.5 +/- 0.3) x 10(-17) cm2 for strained MQW structures.

引用

页码：604 / 606

页数：3

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